Toshiba announced the development of BENANDTM, a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). According to Toshiba pers release, BENAND’s diverse applications include LCD TVs and digital cameras along with robots and other industrial applications.
Samples of eight BENAND products in two capacities, 4Gigabit and 8Gigabit, will be available from today and mass production will follow from March 2012.
“The simple interface and high reliability of small capacity SLC NAND has won it wide use in consumer applications and industrial programming. Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with 32nm process, ” cited the pers release. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.
Some key features of Benand:
- Removes the burden of ECC from the host processor while minimizing protocol changes and allowing host processors to support leading-edge process NAND flash memory in a timely manner
- Embeds an ECC with an error correction of 4 bit per 512 bytes onto Toshiba’s cutting-edge 32nm process SLC NAND flash memory.
After summer 2012, Toshiba will expand the BENAND lineup to include 24nm process NAND flash memory products.
BENAND, the latest Toshiba multi-application single level cell (SLC) NAND flash memory
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